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| WMBT5401LT1 PNP Silicon Transistor 1 BASE 2 EMITTER 1 COLLECTOR 3 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC Value -150 -160 -5.0 -500 Unit Vdc Vdc 2 SOT- 23 (TO - 236AB) Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 Unit mW mW/C C/W mW mW/C RqJA TJ, Tstg - 55 to +150 C/W C DEVICE MARKING W MBT5401LT1 = 2L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -100 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector Cutoff Current (VCB = -120 Vdc, IE = 0) (VCB = -120 Vdc, IE = 0, TA = 100C) V(BR)CEO -150 V(BR)CBO -160 V(BR)EBO -5.0 I CB0 -- -- -50 -50 nAdc Adc -- -- Vdc -- Vdc Vdc Wing Shing Computer Components Co., (H.K .)L td. Homepage: http: / / www.wingshing.com Tel: (8 52) 2341 9 27 6 Fax : (8 52) 27 9 7 8 153 E-mail: wsccltd@ hk star.com Motorola Small-Signal Transistors, FETs and Diodes Device Data 1 WMBT5401LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = -1.0 mAdc, VCE = -5.0 Vdc) (IC = -10 mAdc, VCE = -5.0 Vdc) (IC = -50 mAdc, VCE = -5.0 Vdc) Collector - Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base - Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) hFE 80 80 80 -- -- 240 -- Vdc -- -- -0.2 -0.5 Vdc -- -- -1.0 -1.0 VCE(sat) VBE(sat) SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -10 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Noise Figure (IC = -200 Adc, VCE = -5.0 Vdc, RS = 10 , f = 1.0 kHz) fT 100 Cobo -- hfe 40 NF -- 8.0 200 dB 6.0 -- 300 pF MHz |
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